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HiPerFET TM
Power MOSFETs
IXFH/IXFM 10 N100
IXFH/IXFM 12 N100
V DSS
1000 V
1000 V
I D25 R DS(on)
10 A 1.20 ?
12 A 1.05 ?
N-Channel Enhancement Mode
High dv/dt, Low t rr , HDMOS TM Family
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1000
1000
V
V
V GS
V GSM
Continuous
Transient
± 20
± 30
V
V
(TAB)
I D25
T C = 25 ° C
10N100
12N100
10
12
A
A
I DM
I AR
E AR
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
10N100
12N100
10N100
12N100
40
48
10
12
30
A
A
A
A
mJ
TO-204 AA (IXFM)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
5
V/ns
D
G
P D
T J
T C = 25 ° C
300
-55 ... +150
W
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
T JM
T stg
150
-55 ... +150
° C
° C
T L
M d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300 ° C
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
International standard packages
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
Applications
DC-DC converters
Synchronous rectification
Battery chargers
V DSS
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 3 mA
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
1000
2.0
4.5
± 100
250
1
V
V
nA
μ A
mA
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25 10N100
12N100
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
1.20
1.05
?
?
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
? 2004 IXYS All rights reserved
DS91531F(01/04)
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